Number of views:
1000
5*10mm² semi-polar GaN self-supporting substrate Semi-polar-(11-22)plane (UID/N/SI)
Retail price
0.0
元
Market price
0.0
元
Number of views:
1000
Product serial number
Quantity
-
+
Stock:
0
Product description
Parameters
Previous
None
Next
None
-
(11-22) face F-S GaN datasheet
Categories:
Product Specification
File size:
240KB
2022-10-17 16:30:00
Page up
1
Page down
Related Products
-
4" self-supporting GaN wafers (non-doped)Specification: GaN-FS-C-U-C100 Size：Ф 100 ± 0.1 mm Thickness：650 ± 50 μm Resistivity (300k): < 0.5 Ω*cm -
4-inch self-supporting GaN wafers (iron doped)Specifications：GaN-FS-C-SI-C100 Size：Ф 100 ±1 mm Thickness：420 ±50μm Resistivity(300k): >1×10⁹Ω*cm -
2" self-supporting GaN wafers (non-doped)Specifications: GaN-FS-C-U-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm Resistivity (300k): < 0.5 Ω*cm -
2-inch self-supporting GaN wafers (silicon doped)Specification: GaN-FS-C-N-C50 Size：Ф 50.8 ± 1 mm Thickness：350 ± 25 μm Resistivity (300k): < 0.05 Ω*cm
-
2-inch self-supporting GaN wafers (iron-doped)Specifications: GaN-FS-C-SI-C50 Size: Ф 50.8 ± 1 mm Thickness: 350 ± 25 μm Resistivity(300k)：> 1 x 106 Ω*cm -
10*10.5mm2Self-supporting GaN wafers (undoped)Specification：GaN-FS-C-U-S10 Size：Ф 10 x 10.5 mm2 Thickness: 350 ± 25 µm Resistivity (300k): < 0.5 Ω-cm -
10*10.5mm2Self-supporting Gallium Nitride wafers (silicon doped)Specifications: GaN-FS-C-N-S10 Size: Ф 10 x 10.5 mm2 Thickness: 350 ± 25 µm Resistivity (300k): < 0.05 Ω-cm
-
10*10.5mm2Self-supporting Gallium Nitride wafers (iron doped)Specifications: GaN-FS-C-SI-S10 Size: Ф 10 x 10.5 mm2 Thickness: 350 ± 25 µm Resistivity (300k)：> 106 Ω·cm
-
5*10mm² non-polar GaN self-supporting substrate A-plane (UID/N/SI)Specifications: GaN-FS-A-U-S Size: Ф 5 x 10 mm2 Thickness: 350 ± 25 µm Resistivity (300k): < 0.5 Ω-cm -
5*10mm² non-polar GaN self-supporting substrate M-plane (UID/N/SI)Specifications: GaN-FS-M-U-S Size: Ф 5 x 10 mm2 Thickness: 350 ± 25 µm Resistivity (300k): < 0.5 Ω-cm
-
5*10mm² semi-polar GaN self-supporting substrate Semi-polar-(10-11)plane (UID/N/SI)Specifications: GaN-FS-SP-U-S Size: Ф 5 x 10 mm2 Thickness: 350 ± 25 µm Resistivity (300k)：< 0.5 Ω·cm
-
5*10mm² semi-polar GaN self-supporting substrate Semi-polar-(11-22)plane (UID/N/SI)Specifications: GaN-FS-SP-U-S Size: Ф 5 x 10 mm2 Thickness: 350 ± 25 µm Resistivity (300k)：< 0.5 Ω·cm
-
5*10mm² semi-polar GaN self-supporting substrate Semi-polar-(20-2-1)plane (UID/N/SI)Specifications: GaN-FS-SP-U-S Size: Ф 5 x 10 mm2 Thickness: 350 ± 25 µm Resistivity (300k)：<0.5Ω·cm
-
6" GaN thick film wafer (undoped)Specifications: GaN-T-C-U-C150 Size: Ф 150 ± 0.2 mm Thickness: 4.5 ± 0.5 μm / < 4% Resistivity (300k)：> 0.5 Ω·cm -
6" GaN thick film wafer (silicon doped)Specifications: GaN-T-C-N-C150 Size: Ф 150 ± 0.2 mm Thickness: 4.5 ± 0.5 μm / < 4% Resistivity (300k)：< 0.05 Ω·cm
-
6" GaN thick film wafer (magnesium doped)Specifications: GaN-T-C-P-C150 Size: Ф 150 ± 0.2 mm Thickness: 4.5 ± 0.5 μm / < 3% Resistivity (300k)：< 10Ω·cm
-
4" GaN thick film wafer (undoped)Specifications: GaN-T-C-U-C100 Size: Ф 100 ± 0.2 mm Thickness: 4.5 ± 0.5 μm / < 3% Resistivity (300k)：> 0.5 Ω·cm -
4" GaN thick film wafer (silicon doped)Specifications: GaN-T-C-N-C100 Size: Ф 100 ± 0.2 mm Thickness: 4.5 ± 0.5 μm / < 3% Resistivity (300k)：< 0.05 Ω·cm
-
4" GaN thick film wafer (magnesium doped)Specifications: GaN-T-C-P-C100 Size: Ф 100 ± 0.2 mm Thickness: 4.5 ± 0.5 μm / < 3% Resistivity (300k)：< 10 Ω·cm
-
2" GaN thick film wafer (undoped)Specifications: GaN-T-C-U-C50 Size: Ф 50.8 ± 0.2 mm Thickness: 4.5 ± 0.5 μm / < 3% Resistivity (300k)：> 0.5 Ω·cm
Contact Us
Add：No.1 Dongdangtian Lane, Suzhou Industrial Park, Jiangsu Province
Sales Director:
Dai Dongyun: 15962257010
Email: daidongyun@suzhouxinniang.com
Sales Assistant:
Miss Ren: 17712482910
Email: sales-asst@suzhouxinniang.com
Online Message
客户留言
Description:
159-6225-7010 
Online Inquiry 
在线留言